Luminescence studies from wires of varying aspect ratio in GaAs/GaAlAs quantum wells
- 19 February 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 263 (1-3), 622-627
- https://doi.org/10.1016/0039-6028(92)90422-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wiresApplied Physics Letters, 1990
- Photoluminescence of overgrown GaAs-GaAlAs quantum dotsSuperlattices and Microstructures, 1989
- Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAsApplied Physics Letters, 1989
- Wavelength and threshold current of a quantum well laser in a strong magnetic fieldApplied Physics Letters, 1989