Lateral electron transport in Cu(In,Ga)Se2 investigated by electro-assisted scanning tunneling microscopy
- 20 October 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (17), 172106
- https://doi.org/10.1063/1.2119422
Abstract
We investigate the lateral electron transport across grain boundaries in Cu ( In , Ga ) Se 2 (CIGS) by a combination of scanning tunneling microscopy(STM) with the excitation provided by the electron beam in electron microscopy—or electro-assistedSTM. Using this method, we report evidence for a significant barrier for electron diffusion across grain boundaries in Cu Ga Se 2 (CGS), which is not present in Cu In Se 2 (CIS). Finally, we discuss the effects of gallium addition.Keywords
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