Activation and diffusion studies of ion-implanted p and n dopants in germanium

Abstract

We have demonstrated symmetrically high levels of electrical activation of both $p$ - and $n$ -type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of $\text{600–850\hspace{0.05em}°}\mathrm{C}$ in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREM™ simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants.