Millimeter wave surface resistance of epitaxially grown YBa2Cu3O7−x thin films
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8), 757-759
- https://doi.org/10.1063/1.101472
Abstract
We have measured the surface resistance of two c‐axis oriented YBa2Cu3O7−x thin‐film samples in a copper host cavity at 86.7 GHz between 4.2 and 300 K. High quality films of 0.6 and 0.4 μm thickness have been grown epitaxially on SrTiO3 by pulsed excimer laser ablation. Their millimeter wave absorption drops sharply at a transition temperature of 86 and 88 K to a corresponding surface resistance at 77 K of 18 mΩ and less than 8 mΩ, respectively. These values exceed the best results on polycrystalline samples and come close to the expectation from classical superconductors. Therefore, applications of high Tc superconductors up to THz frequencies can be envisaged now.Keywords
This publication has 6 references indexed in Scilit:
- Epitaxial growth of YBa2Cu3O7−x thin films by a laser evaporation processApplied Physics Letters, 1988
- As-deposited high T c and J c superconducting thin films made at low temperaturesApplied Physics Letters, 1988
- Superconducting Perovskites in microwave fieldsPhysica C: Superconductivity and its Applications, 1988
- Millimeter-wave surface resistance measurements in highly orientedthin filmsPhysical Review B, 1988
- Anisotropic nature of high-temperature superconductivity in single-crystalPhysical Review Letters, 1987
- Temperature dependence of the magnetic penetration depth in the high- superconductor : Evidence for conventional -wave pairingPhysical Review B, 1987