Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

Abstract

A simple self‐consistent model is described, which takes into account nonstationary electron‐dynamic effects and gate‐edge effects in submicrometer gate FET devices. Analytical formulations are used to describe nonstationary electron dynamics, which are derived by fitting steady‐state results of Monte Carlo calculations. The first results show a significant improvement in the transconductance g_m as well as in the cutoff frequency for submicrometer devices. A first attempt to optimize the impurity concentration level is made which shows that a compromise can be found for present‐day feasible submicrometer gate devices.