Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band ordering

Abstract

This paper describes Monte Carlo calculations of velocity‐field characteristics for GaAs using the recent experimental conduction‐band ordering of Aspnes, which places the L^c₆(111) conduction‐band minima lower in energy than the X^c₆(100) minima. These calculations use intervalley deformation potentials which give the best fit to recent high‐field drift velocity measurements, and at the same time give good agreement with accepted peak velocity and threshold field values.