High-precision band-gap determination of Al0.48In0.52As with optical and structural methods
- 10 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2), 140-141
- https://doi.org/10.1063/1.102125
Abstract
The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature‐dependent photoluminescence, wavelength‐dispersive x‐ray analysis, and triple‐crystal x‐ray diffractometry.Keywords
This publication has 2 references indexed in Scilit:
- Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionJournal of Applied Physics, 1984
- Direct energy gap of Al1−xInxAs lattice matched to InPApplied Physics Letters, 1984