A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Abstract

This letter reports the use of boron ion implantation doping during simultaneous growth of silicon molecular beam epitaxy. It describes further a technique for epitaxial growth of abrupt silicon p-n junctions by rapid changeover during growth between boron and arsenic ion beams. This is expected to be of importance in a variety of applications, including, for example, high speed bipolar junction transistors.