Effective Bloch equations for semiconductors

Abstract

Generalized Bloch equations for laser-excited semiconductors are derived applying quantum-mechanical projection-operator techniques. The equations include phase-space filling and the many-body Coulomb effects. The coherent part of the equations is evaluated for the regime of ultrafast-pump-probe excitation and shown to reduce to the inhomogeneously broadened two-level Bloch equations for the different momentum states if the proper Coulomb enhancement in the density of states is taken into account. For the high-excitation quasithermal regime a generalization of the Elliott formula for the absorption spectrum is derived which is valid not only for bulk semiconductors, but also for quantum-well structures and other systems with reduced spatial dimensions.