A new method of vapor growth of GaAs
- 1 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 220-224
- https://doi.org/10.1016/0022-0248(74)90307-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaPJournal of the Electrochemical Society, 1972
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971
- Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor GrowthJournal of the Electrochemical Society, 1970
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open TubeJapanese Journal of Applied Physics, 1968