MOS crystal oscillator design
- 1 April 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (2), 222-228
- https://doi.org/10.1109/JSSC.1980.1051366
Abstract
The operation of MOS crystal oscillators is investigated assuming near-sinusoidal AC voltages at gate and drain. It is shown that the circuit operation depends basically on only two normalized parameters. Computer solution is used to produce a series of normalized curves allowing oscillator design for prescribed start-up conditions, steady-state amplitude, and operating current. The theoretical predictions agree closely with measurements on sample circuits.Keywords
This publication has 2 references indexed in Scilit:
- Crystal Oscillator Design and Temperature CompensationPublished by Springer Nature ,1978
- Modeling and simulation of insulated-gate field-effect transistor switching circuitsIEEE Journal of Solid-State Circuits, 1968