Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructures
- 15 February 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4), 428-430
- https://doi.org/10.1063/1.94798
Abstract
Transmission electron microscopy and photoluminescence data are used to show that a single GaAs quantum well (Lz ≊70 Å) confined by Alx′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zn diffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.Keywords
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