Low-temperature organometallic chemical vapor deposition of platinum
- 24 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (17), 1591-1592
- https://doi.org/10.1063/1.99921
Abstract
Impurity‐free, polycrystalline films of platinum have been grown by the decomposition of cyclopentadienyl platinum trimethyl, C pPtM e 3, in hydrogen and a noble gas over silicon or glass substrates heated to 180 °C. The films contain less than 1 at. % of oxygen and carbon, and no other detectable impurities, as measured by x‐ray photoelectron and Auger spectroscopies after argon ion sputtering. Sheet resistivities are 50% greater than sputter‐deposited platinum.Keywords
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