Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substrates
- 1 July 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1), 459-462
- https://doi.org/10.1063/1.343850
Abstract
Strained GaAs/InGaAs/AlGaAs quantum‐well structures grown on GaAs have been removed from their original substrates by a lift‐off process and bonded directly to glass or SiO2‐coated Si substrates. Both undoped and modulation‐doped structures have been characterized before and after transfer by Hall measurements, variable temperature x‐ray diffraction, and photoluminescence. The bonded structures retain the high quality of the as‐grown layers.Keywords
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