The effect of oxygen on the electrical properties of silicon
- 1 January 1977
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 38 (9), 963-970
- https://doi.org/10.1016/0022-3697(77)90196-2
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966
- Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction MicrographyJapanese Journal of Applied Physics, 1964
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954