The dependence on growth temperature of the photoluminescence properties of nitrogen-doped ZnSe grown by MOCVD
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4), 279-284
- https://doi.org/10.1016/0022-0248(90)90730-9
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Yazaki Memorial Foundation for Science and Technology
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