Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7R), 1530-1538
- https://doi.org/10.1143/jjap.30.1530
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and OzoneJournal of the Electrochemical Society, 1990
- Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide FilmsJournal of the Electrochemical Society, 1990
- Analysis and modelling of tetraethoxysilane pyrolysisJournal of Analytical and Applied Pyrolysis, 1988
- Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicateJournal of Vacuum Science & Technology B, 1987
- Plasma‐exposed polymerization of cyclic organosiloxanes in the condensed phaseJournal of Polymer Science Part C: Polymer Letters, 1981