Growth of epitaxial CoSi2 film on Si (100) substrate induced by an interfacial Ti layer
- 31 October 1993
- journal article
- Published by Elsevier in Materials Letters
- Vol. 17 (6), 383-387
- https://doi.org/10.1016/0167-577x(93)90131-g
Abstract
No abstract availableKeywords
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- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985