Pressure-sensitive insulated gate field-effect transistor (PSIGFET)
- 28 February 1990
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 21 (1-3), 126-132
- https://doi.org/10.1016/0924-4247(90)85024-x
Abstract
No abstract availableKeywords
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