Band Gap Energy and Its Temperature Dependence of GaInAsSb Quaternary Alloy Grown by Molecular Beam Epitaxy
- 1 January 1992
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 9 (1), 53-56
- https://doi.org/10.1088/0256-307x/9/1/015
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μmApplied Physics Letters, 1990
- Optical Properties of MBE-Grown GainassbMRS Proceedings, 1990
- Two-tone optical heterodyne spectroscopy with diode lasers: theory of line shapes and experimental resultsJournal of the Optical Society of America B, 1987
- Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxyApplied Physics Letters, 1986
- MOVPE growth of GaInAsSbJournal of Crystal Growth, 1986
- Reflection high-energy electron diffraction studies on the molecular-beam-epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSbJournal of Applied Physics, 1985
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- On the theory of temperature shift of the absorption curve in non-polar crystalsCzechoslovak Journal of Physics, 1955
- Temperature Dependence of the Energy Gap in SemiconductorsPhysical Review B, 1951