Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
- 24 September 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (13), 1292-1294
- https://doi.org/10.1063/1.103462
Abstract
Diode lasers emitting at 2.29 μm have been fabricated from lattice‐matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room‐temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room‐temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.Keywords
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