Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8), 473-475
- https://doi.org/10.1063/1.90090
Abstract
Room‐temperature Ga(1−x)AlxAs‐GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid‐phase epitaxy. The lowest threshold achieved is 590 A/cm2 for a laser with an active layer thickness of d=1100 Å and Ga(1−x)AlxAs confinement layers with x∼0.50.Keywords
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