Spontaneous and stimulated recombination in p+-n-n+(AlGa)As-GaAs heterojunction laser diodes
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2), 383-387
- https://doi.org/10.1109/jqe.1973.1077456
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Coulomb interaction in semiconductor lasersIEEE Journal of Quantum Electronics, 1972
- Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial MethodJournal of Applied Physics, 1972
- Lasing Transitions in p+-n-n+ (AlGa) As–Ga As Heterojunction LasersApplied Physics Letters, 1972
- Optical Gain in Lightly Doped GaAsApplied Physics Letters, 1971
- Electroabsorption in Semiconductors: The Excitonic Absorption EdgePhysical Review B, 1970
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- Far-field patterns of electron-beam pumped semiconductor lasersIEEE Journal of Quantum Electronics, 1968
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962