Donor-induced disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum-well lasers
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12), 5345-5348
- https://doi.org/10.1063/1.334853
Abstract
A simple form of a buried heterostructure AlxGa1−xAs‐GaAs quantum‐well laser is described that is realized by impurity‐induced layer disordering (donor‐induced disordering). The layer disordering [and the resulting band‐gap shift to higher energy (and lower index)] is accomplished by Si diffusion in a stripe pattern defined by a Si3N4 mask. Single‐mode lasers of stripe width 3 and 6 μm are demonstrated that operate continuously at 300 K in the threshold current range of 10–25 mA and with single‐facet power levels as high as 10–20 mW.Keywords
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