Charge-State Effects in Displacement Damage Invited Paper
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 18 (6), 11-20
- https://doi.org/10.1109/tns.1971.4326408
Abstract
Charge-state effects in displacement damage in covalent semiconductors are reviewed. Specifically the influence on defect production mechanisms, configurations, mobility, annealing kinetics, interaction and dissociation are discussed. The recent theoretical work on the split-interstitial is mentioned, as is the new athermal migration mechanism.Keywords
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