High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator
- 10 March 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Theoretical limit estimation of lateral wide band-gap semiconductor power-switching deviceSolid-State Electronics, 2004
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behaviorIEEE Transactions on Electron Devices, 2003
- Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002