Design of a high-performance 1024-B switched capacitor p-channel IGFET memory chip
- 1 October 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 8 (5), 310-318
- https://doi.org/10.1109/jssc.1973.1050409
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Self-aligned maskless chan stops for IGFET integrated circuitsIEEE Transactions on Electron Devices, 1973
- Tapered windows in SiO2by ion implantationIEEE Transactions on Electron Devices, 1973
- Storage array and sense/refresh circuit for single-transistor memory cellsIEEE Journal of Solid-State Circuits, 1972
- Eliminating threshold losses in MOS circuits by bootstrapping using varactor couplingIEEE Journal of Solid-State Circuits, 1972