Theoretical contribution to the design of millimeter-wave TEO's
- 1 March 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (3), 223-229
- https://doi.org/10.1109/t-ed.1983.21104
Abstract
Systematic simulations of GaAs millimeter-wave transferred-electron devices have been performed, using a realistic model taking into account spatial nonuniformity as well as relaxation effects. Operating temperature is also considered. These simulations indicate the possibility of a fundamental accumulation layer transit mode up to 100 GHz, with higher conversion efficiency than that obtained with a harmonic mode. Significant improvement in output power is expected from InP fundamental oscillators in the upper part of the millimeter band.Keywords
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