Mechanism of crystal growth in the SiCl4-H2 system
- 1 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 215-219
- https://doi.org/10.1016/0022-0248(74)90306-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Silicon epitaxial growthJournal of Crystal Growth, 1972
- Layer growth in silicon epitaxyJournal of Crystal Growth, 1972
- Surface Orientation Effect of the Shadow of the Stacking FaultJournal of Applied Physics, 1969