The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC
- 13 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15), 2148-2150
- https://doi.org/10.1063/1.119364
Abstract
We examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (<10 ppm H2O) N2 heat treatment, and after standard (approximately 50 ppm H2O) Ar annealing. A center is observed following dry heat treatment at temperatures greater than 800 °C. This center is passivated by standard Ar annealing at temperatures greater than 700 °C and regenerated after subsequent dry heat treatment. We suggest that this defect is related to an unpaired electron on a carbon atom created by the release of a hydrogen-related species.Keywords
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