Effect of uniaxial pressure on the threshold current of double-heterostructure GaAs lasers
- 15 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (4), 124-125
- https://doi.org/10.1063/1.1654309
Abstract
On application of uniaxial pressure perpendicular to the junction, the threshold current of GaAs double‐heterostructure injection lasers at room temperature is observed to increase to a certain critical pressure P0, and then decrease with further increase in pressure. A flip of the polarization of laser light occurs at P0. This behavior can be explained using a model previously proposed to explain the reduction in threshold of homostructure GaAs lasers upon application of uniaxial pressure.Keywords
This publication has 6 references indexed in Scilit:
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