Study on the resistive switching time of TiO2 thin films

Abstract

The required time for voltage-pulse-induced resistive switching of $40\text{-}\mathrm{nm}$ -thick $\mathrm{Ti}{\mathrm{O}}_2$ thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area $\sim 0.07\mu {\mathrm{m}}^2$ ) was studied as a function of pulse voltage. For $\text{off}\to \text{on}$ switching at least $2\mathrm{V}$ was necessary and the minimum switching times were $\sim 20\mathrm{ns}$ at $2\mathrm{V}$ and $\sim 10\mathrm{ns}$ at $3\mathrm{V}$ . For $\text{on}\to \text{off}$ switching, a minimum switching time of $5\mu \mathrm{s}$ was obtained at $2.5\mathrm{V}$ . The resistance of the on-state device was also dependent on the switching voltage and time.