Aluminum-silicon ohmic contact on “shallow” junctions
- 1 March 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (3), 255-262
- https://doi.org/10.1016/0038-1101(80)90011-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- AL/Si and Al/Poly‐Si Contact Resistance in Integrated CircuitsJournal of the Electrochemical Society, 1977
- Contact metallurgy for shallow junction Si devicesJournal of Applied Physics, 1976
- Electrical and mechanical features of the platinum silicide-aluminum reactionJournal of Applied Physics, 1973
- Diffusion-limited Si precipitation in evaporated Al/Si filmsJournal of Applied Physics, 1973
- Behavior of AlSi Schottky barrier diodes under heat treatmentSolid-State Electronics, 1973
- Precipitation of Si from the Al Metallization of Integrated CircuitsApplied Physics Letters, 1972
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Silicon Process Technology for Monolithic MemoryIBM Journal of Research and Development, 1972
- Diffusivity and Solubility of Si in the Al Metallization of Integrated CircuitsApplied Physics Letters, 1971
- Failure of aluminium contacts to silicon in shallow diffused transistorsMicroelectronics Reliability, 1970