Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 427-430
- https://doi.org/10.1016/0022-0248(89)90435-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Composés métalliques de nickel et gallium sur GaAs par codéposition en ultravideRevue de Physique Appliquée, 1989
- Growth of αRh2As on GaAs (001) in a molecular-beam epitaxy systemJournal of Applied Physics, 1988
- Epitaxial growth of GaAs/NiAl/GaAs heterostructuresApplied Physics Letters, 1988
- Growth of RhGa on GaAs (001) in a molecular beam epitaxy systemApplied Physics Letters, 1988
- Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)Electronics Letters, 1987