Preparation of ZnO Thin-Film Transducers by Vapor Transport
- 1 October 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (11), 5215-5223
- https://doi.org/10.1063/1.1655944
Abstract
Thin films of ZnO were prepared for transducers and microwave acoustic delay lines. Preliminary results are reported for the latter devices. Vapor transport of ZnO in a sealed system was achieved at a source temperature of 700°C, a source‐substrate distance of 10 cm, a substrate temperature of 570°C, and 2 mm O2. On (0001) sapphire substrates, x‐ray diffraction proved ZnO (0002) planes were oriented parallel to the substrate. Methods were developed for the construction of predominantly longitudinal mode transducers. A one‐way conversion loss of 20 dB at 1.2 GHz was measured.Keywords
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