Analytical design theory for high voltage pin rectifiers
- 1 June 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (6), 825-841
- https://doi.org/10.1016/0038-1101(70)90069-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- On the effective carrier lifetime in p-s-n rectifiers at high injection levelsSolid-State Electronics, 1969
- Notes on the theory of the forward characteristic of power rectifiersSolid-State Electronics, 1968
- The forward characteristic of silicon power rectifiers at high current densitiesSolid-State Electronics, 1968
- Effect of Electrostatic Field Gradient in Semiconductors with Diffused ImpuritiesJournal of Applied Physics, 1966
- The maximum blocking capability of silicon thyristorsSolid-State Electronics, 1965
- P+IN+ silicon diodes at high forward current densitiesSolid-State Electronics, 1965
- Electron-Hole Scattering at High Injection-Levels in GermaniumNature, 1962