A physical large signal Si MOSFET model for RF circuit design
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X), 391-394
- https://doi.org/10.1109/mwsym.1997.602816
Abstract
A new physically based Si MOSFET large signal model, BSIM3v3, developed by UC Berkeley, has been evaluated for high-frequency mixed-signal circuit analysis in a frequency domain, harmonic balance simulator. The model is validated using simulated RF power characteristics of automatic load pull measurement at different bias and matching conditions.Keywords
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