Electrical activation process of phosphorus atoms with annealing for doped CVD poly-Si
- 1 November 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (11), 7256-7257
- https://doi.org/10.1063/1.325805
Abstract
The electrical activation process of the incorporated P atoms with annealing for CVD poly‐Si is investigated using ESR. As a result, it is concluded that the P atoms act first as compensators on ESR centers due to dangling bonds, and conduction electrons are supplied from the remaining P atoms. Furthermore, the following possibilities are suggested: (1) The increase of the conduction electron density with annealing is not due to the increase of the crystalline region, but the increase of the conduction electron density in crystallites due to the decrease of defect density. (2) The mobility in crystallites is determined mainly by P impurity scattering as in crystalline Si.Keywords
This publication has 6 references indexed in Scilit:
- Doping and annealing effects on ESR in chemically vapor deposited amorphous siliconSolid State Communications, 1979
- Electron Spin Resonance Studies on Ion-Implanted Silicon. II. Conduction ElectronsJapanese Journal of Applied Physics, 1973
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. I. Metallic SamplesPhysical Review B, 1972
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption IntensityJournal of the Physics Society Japan, 1969
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some SemiconductorsPhysical Review B, 1954