Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
- 1 March 1967
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 22 (3), 859-864
- https://doi.org/10.1143/jpsj.22.859
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Transport properties of heavily doped N-type siliconSolid State Communications, 1966
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Magnetoresistance in Heavily Doped-Type SiliconPhysical Review B, 1965
- Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type GermaniumJournal of the Physics Society Japan, 1963
- Empirical Characterization of Low-Temperature Magnetoresistance Effects in Heavily Doped Ge and SiPhysical Review Letters, 1963
- Impurity Conduction in SiliconPhysical Review B, 1961
- Low-temperature hall coefficient and conductivity in heavily doped siliconJournal of Physics and Chemistry of Solids, 1960
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958