Native oxide-embedded AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Abstract

Data are presented on the photopumped laser operation of an AlAs‐Al_yGa_1−yAs‐GaAs‐In_xGa_1−xAs quantum well heterostructure in which the GaAs‐In_xGa_1−xAs active region is embedded, top and bottom, in native oxide. The upper and lower wider gap confining regions of the laser are selectively converted to oxide, leaving the active region intact. The oxidation (H₂O+N₂, 425 °C) proceeds laterally (perpendicular to the crystal growth direction) from a chemically etched mesa edge. The photopumped oxide‐embedded heterostructure operates as a laser continuously at 77 K and pulsed at 300 K. In comparison with the as‐grown crystal, the oxidized sample shows no significant laser threshold degradation.