Photoluminescence of thermally treated n-type Si-doped GaAs
- 1 December 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (12), 6187-6188
- https://doi.org/10.1063/1.324550
Abstract
Photoluminescence measurements on Si‐doped GaAs single crystals heat treated in vacuum at 400≲T≲800 °C reveal emission peaks at 1.363, 1.409, and 1.487 eV, which correspond to three acceptor levels introduced through the activation of vacancies and the site transfer of Si atoms during the annealing process.Keywords
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