III-N light emitting diodes fabricated using RF nitrogen gas source MBE
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4), 154-158
- https://doi.org/10.1016/0022-0248(95)01066-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- GaN growth by a controllable RF-excited nitrogen sourceJournal of Crystal Growth, 1995
- Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layersApplied Physics Letters, 1995
- The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphireJournal of Electronic Materials, 1995
- High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor depositionJournal of Electronic Materials, 1995
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Carbon doping by a compact electron beam sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1993
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LEDJournal of Luminescence, 1991