InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers
- 15 December 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (12), 7462-7468
- https://doi.org/10.1063/1.1517750
Abstract
We report InAs quantum dot infrared photodetectors that utilize In 0.15 Ga 0.85 As strain-relief cap layers. These devices exhibited normal-incidence photoresponse peaks at 8.3 or 8.8 μm for negative or positive bias, respectively. At 77 K and −0.2 V bias the responsivity was 22 mA/W and the peak detectivity D * was 3.2×10 9 cm Hz 1/2 / W .Keywords
This publication has 15 references indexed in Scilit:
- Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivityIEEE Journal of Quantum Electronics, 2002
- Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n–i–n photodetector structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1−xAs capping layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dotsApplied Physics Letters, 2002
- Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wellsApplied Physics Letters, 2001
- High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 KApplied Physics Letters, 2001
- High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layerApplied Physics Letters, 2001
- Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active regionJournal of Applied Physics, 2001
- Photovoltaic quantum-dot infrared detectorsApplied Physics Letters, 2000
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998