The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVD
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (12), 2889-2894
- https://doi.org/10.1109/16.40951
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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