A thermally activated solid state reaction process for fabricating ohmic contacts to semiconducting diamond

Abstract

Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/Au deposited on diamond produced adherent ohmic contacts after annealing at 950 °C. A thermally activated solid state reaction which produces a refractory carbide precipitate at the original diamond/metal interface is the principal factor in affecting the properties of the contacts. The interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x‐ray diffraction, metallography, and I‐V measurements.