Preparation of ohmic contacts to semiconducting diamond
- 14 October 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 22 (10), 1562-1564
- https://doi.org/10.1088/0022-3727/22/10/026
Abstract
Low resistance ohmic contacts were manufactured on a natural semiconducting diamond (type IIb), by implanting boron ions at a temperature of 200 degrees C. This was followed by annealing at 1200 degrees C and removal of the top ion-damaged layer by etching in a hot acids solution. The thin, highly doped surface which remained could then be contacted with metals which need not interact chemically with the diamond surface.Keywords
This publication has 10 references indexed in Scilit:
- Fermi-Dirac statistics and the nature of the compensating donors in boron-doped diamond layersPhysical Review B, 1989
- Improved activation of boron-dopant atoms implanted into diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Ohmic contacts to semiconducting diamondIEEE Electron Device Letters, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Volume expansion of diamond during ion implantationPhysical Review B, 1986
- Onset of hopping conduction in carbon-ion-implanted diamondPhysical Review B, 1985
- Effective p-type doping of diamond by boron ion implantationJournal of Applied Physics, 1983
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- Hopping conductivity in C-implanted amorphous diamond, or how to ruin a perfectly good diamondSolid State Communications, 1976