Far-infrared photoresponse of the InAs/GaInSb superlattice
- 12 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (7), 846-848
- https://doi.org/10.1063/1.105255
Abstract
We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far‐infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time‐resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron‐hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.Keywords
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