Energy levels and Coulomb matrix elements in doped GaAs-(GaAl)As multiple-quantum-well heterostructures

Abstract

We present a simple model for calculating energy levels and envelope functions of electrons in the conduction subbands of doped GaAs-(GaAl)As multiple-quantum-well heterostructures. The model, which has no adjustable parameters, takes into account the discontinuity of the conduction-band edges at the GaAs-(GaAl)As interface and the electrostatic potential in the GaAs wells. Calculated intersubband splittings and Coulomb matrix elements are in full agreement with parameters derived from light-scattering experiments.