Electronic structure and band lineups at the diamond/boron nitride and diamond/nickel interfaces
- 31 December 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 7 (4), 335-339
- https://doi.org/10.1016/0749-6036(90)90221-r
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- First-principles, general-potential local-orbital calculations for bulk crystalsPhysical Review B, 1990
- Electronic structure of an ideal diamond-nickel (001) interfacePhysical Review B, 1990
- Loss of epitaxy during diamond film growth on ordered Ni(100)Journal of Applied Physics, 1989
- Thin superlattices and band-gap discontinuities: The (110) diamond–boron nitride interfacePhysical Review B, 1988
- High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High PressureScience, 1987
- Chemically bonded diamondlike carbon films from ion-beam depositionPhysical Review Letters, 1987
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977