Dechanneling of 5 MeV Protons from planar channels in silicon and its temperature dependence

Abstract

We have investigated the dechanneling properties of 5 MeV protons in {110} planes in silicon. From measurements of the spectra of particles transmitted through a 60 μ thick crystal the half-thickness (x_½) for dechanneling is deduced for crystal temperatures between room temperature and 600°C. An absence of a significant temperature dependence of multiple scattering in the plane is observed and suggests that the multiple scattering is predominantly electronic. Calculations of the dechannclling length, x _1/2, as a function of temperature, using the Monte-Carlo critical angle results of Barrett, are found to agree very well with the experimental results. Also the energy loss rate of well channeled protons is observed to be independent of temperature up to 600°C. This result correlates well with previous observations of the temperature dependence of channeled particle ranges.